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A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold
X. Li; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; M. Shi; D.M. Zhao; W. Liu; J.J. Zhu; S.M. Zhang; H. Yang
2015
Source PublicationSUPERLATTICES AND MICROSTRUCTURES
Volume80Issue:2015Pages:111–117
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26759
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
X. Li,D.G. Zhao,D.S. Jiang,et al. A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold[J]. SUPERLATTICES AND MICROSTRUCTURES,2015,80(2015):111–117.
APA X. Li.,D.G. Zhao.,D.S. Jiang.,P. Chen.,Z.S. Liu.,...&H. Yang.(2015).A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold.SUPERLATTICES AND MICROSTRUCTURES,80(2015),111–117.
MLA X. Li,et al."A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold".SUPERLATTICES AND MICROSTRUCTURES 80.2015(2015):111–117.
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