| A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold | |
| X. Li; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; M. Shi; D.M. Zhao; W. Liu; J.J. Zhu; S.M. Zhang; H. Yang | |
| 2015 | |
| Source Publication | SUPERLATTICES AND MICROSTRUCTURES
 |
| Volume | 80Issue:2015Pages:111–117 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26759 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | X. Li,D.G. Zhao,D.S. Jiang,et al. A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold[J]. SUPERLATTICES AND MICROSTRUCTURES,2015,80(2015):111–117. |
| APA | X. Li.,D.G. Zhao.,D.S. Jiang.,P. Chen.,Z.S. Liu.,...&H. Yang.(2015).A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold.SUPERLATTICES AND MICROSTRUCTURES,80(2015),111–117. |
| MLA | X. Li,et al."A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold".SUPERLATTICES AND MICROSTRUCTURES 80.2015(2015):111–117. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| A modified structure（905KB） | 限制开放 | License | Application Full Text | |||
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