SEMI OpenIR  > 半导体超晶格国家重点实验室
Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication
Fangyuan Lu; Renxiong Li; Yan Li; Nengjie Huo; Juehan Yang; Yongtao Li; Bo Li; Shengxue Yang; Zhongming Wei; Jingbo Li
2015
Source PublicationChemPhysChem
Volume16Issue:1Pages:99-103
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26758
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Fangyuan Lu,Renxiong Li,Yan Li,et al. Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication[J]. ChemPhysChem,2015,16(1):99-103.
APA Fangyuan Lu.,Renxiong Li.,Yan Li.,Nengjie Huo.,Juehan Yang.,...&Jingbo Li.(2015).Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication.ChemPhysChem,16(1),99-103.
MLA Fangyuan Lu,et al."Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication".ChemPhysChem 16.1(2015):99-103.
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