Knowledge Management System Of Institute of Semiconductors,CAS
| Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication | |
| Fangyuan Lu; Renxiong Li; Yan Li; Nengjie Huo; Juehan Yang; Yongtao Li; Bo Li; Shengxue Yang; Zhongming Wei; Jingbo Li | |
| 2015 | |
| Source Publication | ChemPhysChem
 |
| Volume | 16Issue:1Pages:99-103 |
| Subject Area | 半导体物理 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26758 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | Fangyuan Lu,Renxiong Li,Yan Li,et al. Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication[J]. ChemPhysChem,2015,16(1):99-103. |
| APA | Fangyuan Lu.,Renxiong Li.,Yan Li.,Nengjie Huo.,Juehan Yang.,...&Jingbo Li.(2015).Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication.ChemPhysChem,16(1),99-103. |
| MLA | Fangyuan Lu,et al."Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication".ChemPhysChem 16.1(2015):99-103. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Improving the Field-（681KB） | 限制开放 | License | Application Full Text | |||
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