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Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes
Lingcong Le; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaojing Li; Xiaoguang He; Jianping Liu; Shuming Zhang; Hui Yang
2015
Source PublicationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume33Issue:1Pages:011209
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26757
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Lingcong Le,Degang Zhao,Desheng Jiang,等. Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2015,33(1):011209.
APA Lingcong Le.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Zongshun Liu.,...&Hui Yang.(2015).Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,33(1),011209.
MLA Lingcong Le,et al."Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 33.1(2015):011209.
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