| Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness | |
| J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du | |
| 2015 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| Volume | 117Pages:055709 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26755 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | J. Yang,D. G. Zhao,D. S. Jiang,et al. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness[J]. JOURNAL OF APPLIED PHYSICS,2015,117:055709. |
| APA | J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,J. J. Zhu.,...&G. T. Du.(2015).Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness.JOURNAL OF APPLIED PHYSICS,117,055709. |
| MLA | J. Yang,et al."Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness".JOURNAL OF APPLIED PHYSICS 117(2015):055709. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Optical and structur（1581KB） | 限制开放 | License | Application Full Text | |||
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