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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
2015
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume117Pages:055709
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26755
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang,D. G. Zhao,D. S. Jiang,et al. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness[J]. JOURNAL OF APPLIED PHYSICS,2015,117:055709.
APA J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,J. J. Zhu.,...&G. T. Du.(2015).Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness.JOURNAL OF APPLIED PHYSICS,117,055709.
MLA J. Yang,et al."Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness".JOURNAL OF APPLIED PHYSICS 117(2015):055709.
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