Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness | |
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du | |
2015 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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Volume | 117Pages:055709 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-23 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26755 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | J. Yang,D. G. Zhao,D. S. Jiang,et al. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness[J]. JOURNAL OF APPLIED PHYSICS,2015,117:055709. |
APA | J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,J. J. Zhu.,...&G. T. Du.(2015).Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness.JOURNAL OF APPLIED PHYSICS,117,055709. |
MLA | J. Yang,et al."Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness".JOURNAL OF APPLIED PHYSICS 117(2015):055709. |
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