SEMI OpenIR  > 中科院半导体材料科学重点实验室
A GaAs-based Hybrid Integration of a Tunneling Diode and a 1060-nm Semiconductor Laser
Junping Mi; Hongyan Yu; Huolei Wang; Shaoyang Tan; Weixi Chen; Ying Ding; Jiaoqing Pan
2015
Source PublicationIEEE PHOTONICS TECHNOLOGY LETTERS
Volume27Issue:2Pages:169-172
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26754
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Junping Mi,Hongyan Yu,Huolei Wang,et al. A GaAs-based Hybrid Integration of a Tunneling Diode and a 1060-nm Semiconductor Laser[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2015,27(2):169-172.
APA Junping Mi.,Hongyan Yu.,Huolei Wang.,Shaoyang Tan.,Weixi Chen.,...&Jiaoqing Pan.(2015).A GaAs-based Hybrid Integration of a Tunneling Diode and a 1060-nm Semiconductor Laser.IEEE PHOTONICS TECHNOLOGY LETTERS,27(2),169-172.
MLA Junping Mi,et al."A GaAs-based Hybrid Integration of a Tunneling Diode and a 1060-nm Semiconductor Laser".IEEE PHOTONICS TECHNOLOGY LETTERS 27.2(2015):169-172.
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