| Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness | |
| W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; M. Shi; D.M. Zhao; X. Li; J.P. Liu; S.M. Zhang; H. Wang; H. Yang | |
| 2015 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| Volume | 625Pages:266–270 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-23 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26753 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | W. Liu,D.G. Zhao,D.S. Jiang,et al. Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2015,625:266–270. |
| APA | W. Liu.,D.G. Zhao.,D.S. Jiang.,P. Chen.,Z.S. Liu.,...&H. Yang.(2015).Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness.JOURNAL OF ALLOYS AND COMPOUNDS,625,266–270. |
| MLA | W. Liu,et al."Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness".JOURNAL OF ALLOYS AND COMPOUNDS 625(2015):266–270. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Localization effect （801KB） | 限制开放 | License | Application Full Text | |||
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