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Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; M. Shi; D.M. Zhao; X. Li; J.P. Liu; S.M. Zhang; H. Wang; H. Yang
2015
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
Volume625Pages:266–270
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26753
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
W. Liu,D.G. Zhao,D.S. Jiang,et al. Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2015,625:266–270.
APA W. Liu.,D.G. Zhao.,D.S. Jiang.,P. Chen.,Z.S. Liu.,...&H. Yang.(2015).Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness.JOURNAL OF ALLOYS AND COMPOUNDS,625,266–270.
MLA W. Liu,et al."Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness".JOURNAL OF ALLOYS AND COMPOUNDS 625(2015):266–270.
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