SEMI OpenIR  > 中科院半导体材料科学重点实验室
Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays
Tuanwei Shi; Xiaoye Wang; Baojun Wang; Wei Wang; Xiaoguang Yang; Wenyuan Yang; Qing Chen; Hongqi Xu; Shengyong Xu; Tao Yang
2015
Source PublicationNanotechnology
Volume26Issue:26Pages:265302
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26747
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Tuanwei Shi,Xiaoye Wang,Baojun Wang,et al. Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays[J]. Nanotechnology,2015,26(26):265302.
APA Tuanwei Shi.,Xiaoye Wang.,Baojun Wang.,Wei Wang.,Xiaoguang Yang.,...&Tao Yang.(2015).Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays.Nanotechnology,26(26),265302.
MLA Tuanwei Shi,et al."Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays".Nanotechnology 26.26(2015):265302.
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