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The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; X. Li; F. Liang; J.P. Liu; S.M. Zhang; H. Yang; Y.T. Zhang; G.T. Du
2015
Source PublicationSUPERLATTICES AND MICROSTRUCTURES
Volume88Pages:50-55
Subject Area光电子学
Date Available2016-03-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26746
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
W. Liu,D.G. Zhao,D.S. Jiang,et al. The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters[J]. SUPERLATTICES AND MICROSTRUCTURES,2015,88:50-55.
APA W. Liu.,D.G. Zhao.,D.S. Jiang.,P. Chen.,Z.S. Liu.,...&G.T. Du.(2015).The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters.SUPERLATTICES AND MICROSTRUCTURES,88,50-55.
MLA W. Liu,et al."The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters".SUPERLATTICES AND MICROSTRUCTURES 88(2015):50-55.
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