| The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes | |
| P. Chen; D.G. Zhao; D.S. Jiang; J.J. Zhu; Z.S. Liu; L.C. Le; J. Yang; X. Li; L. Q. Zhang; J.P. Liu; S.M. Zhang; H. Yang | |
| 2015 | |
| Source Publication | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| Volume | 212Issue:12Pages:2936–2943 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26735 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | P. Chen,D.G. Zhao,D.S. Jiang,et al. The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2015,212(12):2936–2943. |
| APA | P. Chen.,D.G. Zhao.,D.S. Jiang.,J.J. Zhu.,Z.S. Liu.,...&H. Yang.(2015).The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,212(12),2936–2943. |
| MLA | P. Chen,et al."The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 212.12(2015):2936–2943. |
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| File Name/Size | DocType | Version | Access | License | ||
| The effect of compos（782KB） | 限制开放 | License | Application Full Text | |||
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