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The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes
P. Chen; D.G. Zhao; D.S. Jiang; J.J. Zhu; Z.S. Liu; L.C. Le; J. Yang; X. Li; L. Q. Zhang; J.P. Liu; S.M. Zhang; H. Yang
2015
Source PublicationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume212Issue:12Pages:2936–2943
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26735
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
P. Chen,D.G. Zhao,D.S. Jiang,et al. The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2015,212(12):2936–2943.
APA P. Chen.,D.G. Zhao.,D.S. Jiang.,J.J. Zhu.,Z.S. Liu.,...&H. Yang.(2015).The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,212(12),2936–2943.
MLA P. Chen,et al."The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 212.12(2015):2936–2943.
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