SEMI OpenIR  > 中科院半导体材料科学重点实验室
Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
Hai-Ming Ji; Baolai Liang; Paul J. Simmonds; Bor-Chau Juang; Tao Yang; Robert J. Young; Diana L.Huffaker
2015
Source PublicationApplied Physics Letters
Volume106Pages:103104
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26732
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Hai-Ming Ji,Baolai Liang,Paul J. Simmonds,et al. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence[J]. Applied Physics Letters,2015,106:103104.
APA Hai-Ming Ji.,Baolai Liang.,Paul J. Simmonds.,Bor-Chau Juang.,Tao Yang.,...&Diana L.Huffaker.(2015).Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence.Applied Physics Letters,106,103104.
MLA Hai-Ming Ji,et al."Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence".Applied Physics Letters 106(2015):103104.
Files in This Item:
File Name/Size DocType Version Access License
Hybrid type-I InAs-G(1308KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Hai-Ming Ji]'s Articles
[Baolai Liang]'s Articles
[Paul J. Simmonds]'s Articles
Baidu academic
Similar articles in Baidu academic
[Hai-Ming Ji]'s Articles
[Baolai Liang]'s Articles
[Paul J. Simmonds]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Hai-Ming Ji]'s Articles
[Baolai Liang]'s Articles
[Paul J. Simmonds]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.