SEMI OpenIR  > 中科院半导体材料科学重点实验室
Study on the response of InAs nanowire transistors to H2O and NO2
Xintong Zhang; Mengqi Fu; Xing Li; Tuanwei Shi; Zhiyuan Ning; Xiaoye Wang
2015
Source PublicationSensors and Actuators B-Chemical Volume
Volume209Pages:456–461
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26728
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xintong Zhang,Mengqi Fu,Xing Li,et al. Study on the response of InAs nanowire transistors to H2O and NO2[J]. Sensors and Actuators B-Chemical Volume,2015,209:456–461.
APA Xintong Zhang,Mengqi Fu,Xing Li,Tuanwei Shi,Zhiyuan Ning,&Xiaoye Wang.(2015).Study on the response of InAs nanowire transistors to H2O and NO2.Sensors and Actuators B-Chemical Volume,209,456–461.
MLA Xintong Zhang,et al."Study on the response of InAs nanowire transistors to H2O and NO2".Sensors and Actuators B-Chemical Volume 209(2015):456–461.
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