SEMI OpenIR  > 中科院半导体材料科学重点实验室
Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates
XiaoyeWang; WennaDu; XiaoguangYang; XingwangZhang; TaoYang
2015
Source PublicationJournal of Crystal Growth
Volume426Pages:287–292
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26724
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
XiaoyeWang,WennaDu,XiaoguangYang,et al. Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates[J]. Journal of Crystal Growth,2015,426:287–292.
APA XiaoyeWang,WennaDu,XiaoguangYang,XingwangZhang,&TaoYang.(2015).Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates.Journal of Crystal Growth,426,287–292.
MLA XiaoyeWang,et al."Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates".Journal of Crystal Growth 426(2015):287–292.
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