SEMI OpenIR  > 中科院半导体材料科学重点实验室
High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy
S. Luo; H.M. Ji; F. Gao; F. Xu; X.G. Yang; P. Liang; T. Yang
2015
Source PublicationOptics Express
Volume23Issue:7Pages:8383-8388
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26720
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
S. Luo,H.M. Ji,F. Gao,et al. High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy[J]. Optics Express,2015,23(7):8383-8388.
APA S. Luo.,H.M. Ji.,F. Gao.,F. Xu.,X.G. Yang.,...&T. Yang.(2015).High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy.Optics Express,23(7),8383-8388.
MLA S. Luo,et al."High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy".Optics Express 23.7(2015):8383-8388.
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