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Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth
Zhi Liu; Juanjuan Wen; Tianwei Zhou; Chunlai Xue; Yuhua Zuo; Chuanbo Li; Buwen Cheng; Qiming Wang
2015
Source PublicationThin Solid Films
Volume597Pages:39–43
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26701
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Zhi Liu,Juanjuan Wen,Tianwei Zhou,et al. Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth[J]. Thin Solid Films,2015,597:39–43.
APA Zhi Liu.,Juanjuan Wen.,Tianwei Zhou.,Chunlai Xue.,Yuhua Zuo.,...&Qiming Wang.(2015).Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth.Thin Solid Films,597,39–43.
MLA Zhi Liu,et al."Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth".Thin Solid Films 597(2015):39–43.
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