SEMI OpenIR  > 中科院半导体材料科学重点实验室
Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 mu
F. Gao; S. Luo; H.M. Ji; X.G. Yang; P. Liang; T. Yang
2015
Source PublicationOptics Express
Volume23Issue:14Pages:18493
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26693
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
F. Gao,S. Luo,H.M. Ji,et al. Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 mu[J]. Optics Express,2015,23(14):18493.
APA F. Gao,S. Luo,H.M. Ji,X.G. Yang,P. Liang,&T. Yang.(2015).Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 mu.Optics Express,23(14),18493.
MLA F. Gao,et al."Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 mu".Optics Express 23.14(2015):18493.
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