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Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum
Xingsheng Xu
2015
Source PublicationApplied Physics Letters
Volume106Pages:091101
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26691
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Xingsheng Xu. Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum[J]. Applied Physics Letters,2015,106:091101.
APA Xingsheng Xu.(2015).Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum.Applied Physics Letters,106,091101.
MLA Xingsheng Xu."Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum".Applied Physics Letters 106(2015):091101.
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