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A quantum dot asymmetric self-gated nanowire FET for high sensitive detection
Zhangchun Shi; Xiaohong Yang; Chenglei Nie; Weihong Yin; Qin Han; Haiqiao Ni; Zhichuan Niu
2015
Source PublicationAIP Advances
Volume5Issue:1Pages:017108
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26687
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Zhangchun Shi,Xiaohong Yang,Chenglei Nie,et al. A quantum dot asymmetric self-gated nanowire FET for high sensitive detection[J]. AIP Advances,2015,5(1):017108.
APA Zhangchun Shi.,Xiaohong Yang.,Chenglei Nie.,Weihong Yin.,Qin Han.,...&Zhichuan Niu.(2015).A quantum dot asymmetric self-gated nanowire FET for high sensitive detection.AIP Advances,5(1),017108.
MLA Zhangchun Shi,et al."A quantum dot asymmetric self-gated nanowire FET for high sensitive detection".AIP Advances 5.1(2015):017108.
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