SEMI OpenIR  > 光电子研究发展中心
Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation
Suyuan Wang; Jun Zheng; Chunlai Xue; Chuanbo Li; Yuhua Zuo; Buwen Cheng; Qiming Wang
2015
Source PublicationAIP Advances
Volume5Issue:12
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26686
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Suyuan Wang,Jun Zheng,Chunlai Xue,et al. Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation[J]. AIP Advances,2015,5(12).
APA Suyuan Wang.,Jun Zheng.,Chunlai Xue.,Chuanbo Li.,Yuhua Zuo.,...&Qiming Wang.(2015).Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation.AIP Advances,5(12).
MLA Suyuan Wang,et al."Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation".AIP Advances 5.12(2015).
Files in This Item:
File Name/Size DocType Version Access License
Ni_ohmic_contacts_to(1950KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Suyuan Wang]'s Articles
[Jun Zheng]'s Articles
[Chunlai Xue]'s Articles
Baidu academic
Similar articles in Baidu academic
[Suyuan Wang]'s Articles
[Jun Zheng]'s Articles
[Chunlai Xue]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Suyuan Wang]'s Articles
[Jun Zheng]'s Articles
[Chunlai Xue]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.