| Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy | |
| Dalin Zhang; Zhi Liu; Dongliang Zhang; Xu Zhang; Junying Zhang; Jun Zheng; Yuhua Zuo; Chunlai Xue; Chuanbo Li; Shunri Oda; Buwen Cheng; Qiming Wang | |
| 2015 | |
| Source Publication | Journal of Physical Chemistry C
 |
| Volume | 119Pages:17842−17847 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26681 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Dalin Zhang,Zhi Liu,Dongliang Zhang,et al. Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy[J]. Journal of Physical Chemistry C,2015,119:17842−17847. |
| APA | Dalin Zhang.,Zhi Liu.,Dongliang Zhang.,Xu Zhang.,Junying Zhang.,...&Qiming Wang.(2015).Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy.Journal of Physical Chemistry C,119,17842−17847. |
| MLA | Dalin Zhang,et al."Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy".Journal of Physical Chemistry C 119(2015):17842−17847. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Sn-Guided Defect-Fre（3044KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment