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Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy
Dalin Zhang; Zhi Liu; Dongliang Zhang; Xu Zhang; Junying Zhang; Jun Zheng; Yuhua Zuo; Chunlai Xue; Chuanbo Li; Shunri Oda; Buwen Cheng; Qiming Wang
2015
Source PublicationJournal of Physical Chemistry C
Volume119Pages:17842−17847
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26681
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Dalin Zhang,Zhi Liu,Dongliang Zhang,et al. Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy[J]. Journal of Physical Chemistry C,2015,119:17842−17847.
APA Dalin Zhang.,Zhi Liu.,Dongliang Zhang.,Xu Zhang.,Junying Zhang.,...&Qiming Wang.(2015).Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy.Journal of Physical Chemistry C,119,17842−17847.
MLA Dalin Zhang,et al."Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy".Journal of Physical Chemistry C 119(2015):17842−17847.
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