Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy | |
Dalin Zhang; Zhi Liu; Dongliang Zhang; Xu Zhang; Junying Zhang; Jun Zheng; Yuhua Zuo; Chunlai Xue; Chuanbo Li; Shunri Oda; Buwen Cheng; Qiming Wang | |
2015 | |
Source Publication | Journal of Physical Chemistry C
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Volume | 119Pages:17842−17847 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-22 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26681 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Dalin Zhang,Zhi Liu,Dongliang Zhang,et al. Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy[J]. Journal of Physical Chemistry C,2015,119:17842−17847. |
APA | Dalin Zhang.,Zhi Liu.,Dongliang Zhang.,Xu Zhang.,Junying Zhang.,...&Qiming Wang.(2015).Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy.Journal of Physical Chemistry C,119,17842−17847. |
MLA | Dalin Zhang,et al."Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy".Journal of Physical Chemistry C 119(2015):17842−17847. |
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