SEMI OpenIR  > 中科院半导体材料科学重点实验室
Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate
Wenna Du; Xiaoguang Yang; Huayong Pan; Xiaoye Wang; Haiming Ji; Shuai Luo; Xianghai Ji; Zhanguo Wang; Tao Yang
2015
Source PublicationCrystal Growth & Design
Volume15Pages:2413−2418
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26680
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wenna Du,Xiaoguang Yang,Huayong Pan,et al. Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate[J]. Crystal Growth & Design,2015,15:2413−2418.
APA Wenna Du.,Xiaoguang Yang.,Huayong Pan.,Xiaoye Wang.,Haiming Ji.,...&Tao Yang.(2015).Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate.Crystal Growth & Design,15,2413−2418.
MLA Wenna Du,et al."Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate".Crystal Growth & Design 15(2015):2413−2418.
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