| Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth | |
| Zhi Liu; Juanjuan Wen; Jun Zheng; Chunlai Xue; Yuhua Zuo; Chuanbo Li; Buwen Cheng; Qiming Wang | |
| 2015 | |
| Source Publication | ECS Journal of Solid State Science and Technology
 |
| Volume | 4Issue:12Pages:415-418 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-03-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26677 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Zhi Liu,Juanjuan Wen,Jun Zheng,et al. Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth[J]. ECS Journal of Solid State Science and Technology,2015,4(12):415-418. |
| APA | Zhi Liu.,Juanjuan Wen.,Jun Zheng.,Chunlai Xue.,Yuhua Zuo.,...&Qiming Wang.(2015).Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth.ECS Journal of Solid State Science and Technology,4(12),415-418. |
| MLA | Zhi Liu,et al."Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth".ECS Journal of Solid State Science and Technology 4.12(2015):415-418. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Strain evolution of （622KB） | 限制开放 | License | Application Full Text | |||
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