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Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain
Genquan Han; Yibo Wang; Yan Liu; Hongjuan Wang; Mingshan Liu; Chunfu Zhang; Jincheng Zhang; Buwen Cheng; Yue Hao
2015
Source PublicationAIP ADVANCES
Volume5Pages:057145
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26676
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Genquan Han,Yibo Wang,Yan Liu,et al. Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain[J]. AIP ADVANCES,2015,5:057145.
APA Genquan Han.,Yibo Wang.,Yan Liu.,Hongjuan Wang.,Mingshan Liu.,...&Yue Hao.(2015).Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain.AIP ADVANCES,5,057145.
MLA Genquan Han,et al."Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain".AIP ADVANCES 5(2015):057145.
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