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Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility
Yan Liu; Jing Yan; Hongjuan Wang; Buwen Cheng; Genquan Han
2015
Source PublicationInternational Journal of Thermophysics
Volume36Pages:980–986
Subject Area光电子学
Indexed BySCI
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26673
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Yan Liu,Jing Yan,Hongjuan Wang,et al. Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility[J]. International Journal of Thermophysics,2015,36:980–986.
APA Yan Liu,Jing Yan,Hongjuan Wang,Buwen Cheng,&Genquan Han.(2015).Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility.International Journal of Thermophysics,36,980–986.
MLA Yan Liu,et al."Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility".International Journal of Thermophysics 36(2015):980–986.
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