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Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback
Xurui Mao; Beiju Huang; Hongmei Chen; Chuantong Cheng; Sheng Gan; Zhaoxin Geng; Hongda Chen
2015
Source PublicationIEEE Electron Device Letters
Volume36Issue:10
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26660
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Xurui Mao,Beiju Huang,Hongmei Chen,et al. Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback[J]. IEEE Electron Device Letters,2015,36(10).
APA Xurui Mao.,Beiju Huang.,Hongmei Chen.,Chuantong Cheng.,Sheng Gan.,...&Hongda Chen.(2015).Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback.IEEE Electron Device Letters,36(10).
MLA Xurui Mao,et al."Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback".IEEE Electron Device Letters 36.10(2015).
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