SEMI OpenIR  > 光电子研究发展中心
Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn
Xu Zhang; Dongliang Zhang; Jun Zheng; Zhi Liu; Chao He; Chunlai Xue; Guangze Zhang; Chuanbo Li; Buwen Cheng; Qiming Wang
2015
Source PublicationSolid-State Electronics
Volume114Pages:178–181
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26657
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Xu Zhang,Dongliang Zhang,Jun Zheng,et al. Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn[J]. Solid-State Electronics,2015,114:178–181.
APA Xu Zhang.,Dongliang Zhang.,Jun Zheng.,Zhi Liu.,Chao He.,...&Qiming Wang.(2015).Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn.Solid-State Electronics,114,178–181.
MLA Xu Zhang,et al."Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn".Solid-State Electronics 114(2015):178–181.
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