Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth | |
J.J.Wen; Z. Liu; T.W. Zhou; C.L. Xue; Y.H. Zuo; C.B. Li; Q.M. Wang; B.W. Cheng | |
2015 | |
Source Publication | THIN SOLID FILMS
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Volume | 586Pages:54-57 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-03-22 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26646 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | J.J.Wen,Z. Liu,T.W. Zhou,et al. Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth[J]. THIN SOLID FILMS,2015,586:54-57. |
APA | J.J.Wen.,Z. Liu.,T.W. Zhou.,C.L. Xue.,Y.H. Zuo.,...&B.W. Cheng.(2015).Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth.THIN SOLID FILMS,586,54-57. |
MLA | J.J.Wen,et al."Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth".THIN SOLID FILMS 586(2015):54-57. |
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Inhibitation of Si-G(652KB) | 限制开放 | License | Application Full Text |
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