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Potential of Ti doped hydrogenated amorphous Si film with suitable resistivity and high TCR for microbolometer applications
Tianwei Zhou; Yuhua Zuo; Kai Qiu; Jun Zheng; Qiming Wang
2015
Source PublicationVacuum
Volume119Pages:30-33
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26645
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Tianwei Zhou,Yuhua Zuo,Kai Qiu,et al. Potential of Ti doped hydrogenated amorphous Si film with suitable resistivity and high TCR for microbolometer applications[J]. Vacuum,2015,119:30-33.
APA Tianwei Zhou,Yuhua Zuo,Kai Qiu,Jun Zheng,&Qiming Wang.(2015).Potential of Ti doped hydrogenated amorphous Si film with suitable resistivity and high TCR for microbolometer applications.Vacuum,119,30-33.
MLA Tianwei Zhou,et al."Potential of Ti doped hydrogenated amorphous Si film with suitable resistivity and high TCR for microbolometer applications".Vacuum 119(2015):30-33.
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