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Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07
Jun Zheng; Suyuan Wang; Xu Zhang; Zhi Liu; Chunlai Xue; Chuanbo Li; Yuhua Zuo; Buwen Cheng; Qiming Wang
2015
Source PublicationIEEE ELECTRON DEVICE LETTERS
Volume36Issue:9Pages:878-880
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26643
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Jun Zheng,Suyuan Wang,Xu Zhang,et al. Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07[J]. IEEE ELECTRON DEVICE LETTERS,2015,36(9):878-880.
APA Jun Zheng.,Suyuan Wang.,Xu Zhang.,Zhi Liu.,Chunlai Xue.,...&Qiming Wang.(2015).Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07.IEEE ELECTRON DEVICE LETTERS,36(9),878-880.
MLA Jun Zheng,et al."Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07".IEEE ELECTRON DEVICE LETTERS 36.9(2015):878-880.
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