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High hole mobility GeSn on insulator formed by self-organized seeding lateral growth
Zhi Liu; Juanjuan Wen; Xu Zhang; Chuanbo Li; Chunlai Xue; Yuhua Zuo; Buwen Cheng; Qiming Wang
2015
Source PublicationJournal of Physics D: Applied Physics
Volume48Pages:445103
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2016-02-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26631
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Zhi Liu,Juanjuan Wen,Xu Zhang,et al. High hole mobility GeSn on insulator formed by self-organized seeding lateral growth[J]. Journal of Physics D: Applied Physics,2015,48:445103.
APA Zhi Liu.,Juanjuan Wen.,Xu Zhang.,Chuanbo Li.,Chunlai Xue.,...&Qiming Wang.(2015).High hole mobility GeSn on insulator formed by self-organized seeding lateral growth.Journal of Physics D: Applied Physics,48,445103.
MLA Zhi Liu,et al."High hole mobility GeSn on insulator formed by self-organized seeding lateral growth".Journal of Physics D: Applied Physics 48(2015):445103.
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