| High hole mobility GeSn on insulator formed by self-organized seeding lateral growth | |
| Zhi Liu; Juanjuan Wen; Xu Zhang; Chuanbo Li; Chunlai Xue; Yuhua Zuo; Buwen Cheng; Qiming Wang | |
| 2015 | |
| Source Publication | Journal of Physics D: Applied Physics
 |
| Volume | 48Pages:445103 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2016-02-16 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26631 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Zhi Liu,Juanjuan Wen,Xu Zhang,et al. High hole mobility GeSn on insulator formed by self-organized seeding lateral growth[J]. Journal of Physics D: Applied Physics,2015,48:445103. |
| APA | Zhi Liu.,Juanjuan Wen.,Xu Zhang.,Chuanbo Li.,Chunlai Xue.,...&Qiming Wang.(2015).High hole mobility GeSn on insulator formed by self-organized seeding lateral growth.Journal of Physics D: Applied Physics,48,445103. |
| MLA | Zhi Liu,et al."High hole mobility GeSn on insulator formed by self-organized seeding lateral growth".Journal of Physics D: Applied Physics 48(2015):445103. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| High hole mobility G（769KB） | 限制开放 | License | Application Full Text | |||
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