High hole mobility GeSn on insulator formed by self-organized seeding lateral growth | |
Zhi Liu; Juanjuan Wen; Xu Zhang; Chuanbo Li; Chunlai Xue; Yuhua Zuo; Buwen Cheng; Qiming Wang | |
2015 | |
Source Publication | Journal of Physics D: Applied Physics
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Volume | 48Pages:445103 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2016-02-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26631 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Zhi Liu,Juanjuan Wen,Xu Zhang,et al. High hole mobility GeSn on insulator formed by self-organized seeding lateral growth[J]. Journal of Physics D: Applied Physics,2015,48:445103. |
APA | Zhi Liu.,Juanjuan Wen.,Xu Zhang.,Chuanbo Li.,Chunlai Xue.,...&Qiming Wang.(2015).High hole mobility GeSn on insulator formed by self-organized seeding lateral growth.Journal of Physics D: Applied Physics,48,445103. |
MLA | Zhi Liu,et al."High hole mobility GeSn on insulator formed by self-organized seeding lateral growth".Journal of Physics D: Applied Physics 48(2015):445103. |
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