SEMI OpenIR  > 集成光电子学国家重点实验室
Simulation and Analysis of Terahertz Modulator Based a Gated Nanostructure
Chen, Y; Guo, WB; Xu, P; Liu, CX; Zhou, JR; Ruan, SP
2014
Source PublicationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume14Issue:5Pages:3403-3406
Date Available2015-08-21
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26612
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Chen, Y,Guo, WB,Xu, P,et al. Simulation and Analysis of Terahertz Modulator Based a Gated Nanostructure[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2014,14(5):3403-3406.
APA Chen, Y,Guo, WB,Xu, P,Liu, CX,Zhou, JR,&Ruan, SP.(2014).Simulation and Analysis of Terahertz Modulator Based a Gated Nanostructure.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,14(5),3403-3406.
MLA Chen, Y,et al."Simulation and Analysis of Terahertz Modulator Based a Gated Nanostructure".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 14.5(2014):3403-3406.
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