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Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As | |
Yue, H; Chen, L; Gao, HX; Zhao, JH; Zhang, XH | |
2014 | |
Source Publication | JOURNAL OF THE KOREAN PHYSICAL SOCIETY
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Volume | 64Issue:10Pages:1504-1508 |
Subject Area | 半导体物理 |
Date Available | 2015-08-21 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26608 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Yue, H,Chen, L,Gao, HX,et al. Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2014,64(10):1504-1508. |
APA | Yue, H,Chen, L,Gao, HX,Zhao, JH,&Zhang, XH.(2014).Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As.JOURNAL OF THE KOREAN PHYSICAL SOCIETY,64(10),1504-1508. |
MLA | Yue, H,et al."Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As".JOURNAL OF THE KOREAN PHYSICAL SOCIETY 64.10(2014):1504-1508. |
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Annealing effect on (347KB) | 限制开放 | License | Application Full Text |
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