SEMI OpenIR  > 半导体超晶格国家重点实验室
Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As
Yue, H; Chen, L; Gao, HX; Zhao, JH; Zhang, XH
2014
Source PublicationJOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume64Issue:10Pages:1504-1508
Subject Area半导体物理
Date Available2015-08-21
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26608
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yue, H,Chen, L,Gao, HX,et al. Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2014,64(10):1504-1508.
APA Yue, H,Chen, L,Gao, HX,Zhao, JH,&Zhang, XH.(2014).Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As.JOURNAL OF THE KOREAN PHYSICAL SOCIETY,64(10),1504-1508.
MLA Yue, H,et al."Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As".JOURNAL OF THE KOREAN PHYSICAL SOCIETY 64.10(2014):1504-1508.
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