SEMI OpenIR  > 半导体超晶格国家重点实验室
Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations
Li, Y; Kang, J; Li, JB
2014
Source PublicationRSC ADVANCES
Volume4Issue:15Pages:7396-7401
Subject Area半导体物理
Indexed BySCI
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26479
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Li, Y,Kang, J,Li, JB. Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations[J]. RSC ADVANCES,2014,4(15):7396-7401.
APA Li, Y,Kang, J,&Li, JB.(2014).Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations.RSC ADVANCES,4(15),7396-7401.
MLA Li, Y,et al."Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations".RSC ADVANCES 4.15(2014):7396-7401.
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