SEMI OpenIR  > 半导体超晶格国家重点实验室
Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei
Li, B; Yang, SX; Huo, NJ; Li, YT; Yang, JH; Li, RX; Fan, C; Lu, FY
2014
Source PublicationRSC ADVANCES
Volume4Issue:50Pages:26407-26412
Subject Area半导体器件
Indexed BySCI
Language中文
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26477
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Li, B,Yang, SX,Huo, NJ,et al. Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei[J]. RSC ADVANCES,2014,4(50):26407-26412.
APA Li, B.,Yang, SX.,Huo, NJ.,Li, YT.,Yang, JH.,...&Lu, FY.(2014).Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei.RSC ADVANCES,4(50),26407-26412.
MLA Li, B,et al."Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei".RSC ADVANCES 4.50(2014):26407-26412.
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