Knowledge Management System Of Institute of Semiconductors,CAS
Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei | |
Li, B; Yang, SX; Huo, NJ; Li, YT; Yang, JH; Li, RX; Fan, C; Lu, FY | |
2014 | |
Source Publication | RSC ADVANCES
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Volume | 4Issue:50Pages:26407-26412 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 中文 |
Date Available | 2015-05-11 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26477 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Li, B,Yang, SX,Huo, NJ,et al. Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei[J]. RSC ADVANCES,2014,4(50):26407-26412. |
APA | Li, B.,Yang, SX.,Huo, NJ.,Li, YT.,Yang, JH.,...&Lu, FY.(2014).Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei.RSC ADVANCES,4(50),26407-26412. |
MLA | Li, B,et al."Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei".RSC ADVANCES 4.50(2014):26407-26412. |
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Growth of large area(648KB) | 限制开放 | License | Application Full Text |
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