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Quantitative determination of the Mn site distribution in ultrathin Ga0.80Mn0.20As layers with high critical temperatures: A Rutherford backscattering channeling investigation
Benzeggouta, D; Khazen, K; Vickridge, I; von Bardeleben, HJ; Chen, L; Yu, XZ; Zhao, JH
2014
Source PublicationPHYSICAL REVIEW B
Volume89Issue:11Pages:115323
Subject Area半导体物理
Indexed BySCI
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26470
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Benzeggouta, D,Khazen, K,Vickridge, I,et al. Quantitative determination of the Mn site distribution in ultrathin Ga0.80Mn0.20As layers with high critical temperatures: A Rutherford backscattering channeling investigation[J]. PHYSICAL REVIEW B,2014,89(11):115323.
APA Benzeggouta, D.,Khazen, K.,Vickridge, I.,von Bardeleben, HJ.,Chen, L.,...&Zhao, JH.(2014).Quantitative determination of the Mn site distribution in ultrathin Ga0.80Mn0.20As layers with high critical temperatures: A Rutherford backscattering channeling investigation.PHYSICAL REVIEW B,89(11),115323.
MLA Benzeggouta, D,et al."Quantitative determination of the Mn site distribution in ultrathin Ga0.80Mn0.20As layers with high critical temperatures: A Rutherford backscattering channeling investigation".PHYSICAL REVIEW B 89.11(2014):115323.
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