SEMI OpenIR  > 半导体超晶格国家重点实验室
Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets
Yang, JH; Lu, FY; Li, Y; Yang, SX; Li, RX; Huo, NJ; Fan, C; Wei, ZM; Li, JB; Li, SS
2014
Source PublicationJOURNAL OF MATERIALS CHEMISTRY C
Volume2Issue:6Pages:1034-1040
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26458
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yang, JH,Lu, FY,Li, Y,et al. Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets[J]. JOURNAL OF MATERIALS CHEMISTRY C,2014,2(6):1034-1040.
APA Yang, JH.,Lu, FY.,Li, Y.,Yang, SX.,Li, RX.,...&Li, SS.(2014).Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets.JOURNAL OF MATERIALS CHEMISTRY C,2(6),1034-1040.
MLA Yang, JH,et al."Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets".JOURNAL OF MATERIALS CHEMISTRY C 2.6(2014):1034-1040.
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