Knowledge Management System Of Institute of Semiconductors,CAS
| Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets | |
| Yang, JH; Lu, FY; Li, Y; Yang, SX; Li, RX; Huo, NJ; Fan, C; Wei, ZM; Li, JB; Li, SS | |
| 2014 | |
| Source Publication | JOURNAL OF MATERIALS CHEMISTRY C
 |
| Volume | 2Issue:6Pages:1034-1040 |
| Subject Area | 半导体物理 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-05-11 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26458 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | Yang, JH,Lu, FY,Li, Y,et al. Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets[J]. JOURNAL OF MATERIALS CHEMISTRY C,2014,2(6):1034-1040. |
| APA | Yang, JH.,Lu, FY.,Li, Y.,Yang, SX.,Li, RX.,...&Li, SS.(2014).Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets.JOURNAL OF MATERIALS CHEMISTRY C,2(6),1034-1040. |
| MLA | Yang, JH,et al."Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets".JOURNAL OF MATERIALS CHEMISTRY C 2.6(2014):1034-1040. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Low temperature elec（811KB） | 限制开放 | License | Application Full Text | |||
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