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Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets | |
Yang, JH; Lu, FY; Li, Y; Yang, SX; Li, RX; Huo, NJ; Fan, C; Wei, ZM; Li, JB; Li, SS | |
2014 | |
Source Publication | JOURNAL OF MATERIALS CHEMISTRY C
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Volume | 2Issue:6Pages:1034-1040 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-05-11 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26458 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Yang, JH,Lu, FY,Li, Y,et al. Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets[J]. JOURNAL OF MATERIALS CHEMISTRY C,2014,2(6):1034-1040. |
APA | Yang, JH.,Lu, FY.,Li, Y.,Yang, SX.,Li, RX.,...&Li, SS.(2014).Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets.JOURNAL OF MATERIALS CHEMISTRY C,2(6),1034-1040. |
MLA | Yang, JH,et al."Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets".JOURNAL OF MATERIALS CHEMISTRY C 2.6(2014):1034-1040. |
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Low temperature elec(811KB) | 限制开放 | License | Application Full Text |
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