Knowledge Management System Of Institute of Semiconductors,CAS
Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes | |
Li, MF; Ni, HQ; Ding, Y; David, B; Kong, L; Ana, CM; Niu, ZC | |
2014 | |
Source Publication | CHINESE PHYSICS B
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Volume | 23Issue:2Pages:027803 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2015-05-11 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26454 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Li, MF,Ni, HQ,Ding, Y,et al. Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes[J]. CHINESE PHYSICS B,2014,23(2):027803. |
APA | Li, MF.,Ni, HQ.,Ding, Y.,David, B.,Kong, L.,...&Niu, ZC.(2014).Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes.CHINESE PHYSICS B,23(2),027803. |
MLA | Li, MF,et al."Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes".CHINESE PHYSICS B 23.2(2014):027803. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Optimization of InAs(962KB) | 限制开放 | License | Application Full Text |
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