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Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes
Zhu, SX; Wang, JX; Yan, JC; Zhang, Y; Pei, YR; Si, Z; Yang, H; Zhao, LX; Liu, Z; Li, JM
2014
Source PublicationECS SOLID STATE LETTERS
Volume3Issue:3Pages:R11-R13
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26451
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhu, SX,Wang, JX,Yan, JC,et al. Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes[J]. ECS SOLID STATE LETTERS,2014,3(3):R11-R13.
APA Zhu, SX.,Wang, JX.,Yan, JC.,Zhang, Y.,Pei, YR.,...&Li, JM.(2014).Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes.ECS SOLID STATE LETTERS,3(3),R11-R13.
MLA Zhu, SX,et al."Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes".ECS SOLID STATE LETTERS 3.3(2014):R11-R13.
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