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| High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy | |
| Xing, JL; Zhang, Y; Xu, YQ; Wang, GW; Wang, J; Xiang, W; Ni, HQ; Ren, ZW; He, ZH; Niu, ZC | |
| 2014 | |
| Source Publication | CHINESE PHYSICS B
 |
| Volume | 23Issue:1Pages:017805 |
| Subject Area | 半导体物理 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-05-11 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26445 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | Xing, JL,Zhang, Y,Xu, YQ,et al. High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J]. CHINESE PHYSICS B,2014,23(1):017805. |
| APA | Xing, JL.,Zhang, Y.,Xu, YQ.,Wang, GW.,Wang, J.,...&Niu, ZC.(2014).High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy.CHINESE PHYSICS B,23(1),017805. |
| MLA | Xing, JL,et al."High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy".CHINESE PHYSICS B 23.1(2014):017805. |
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