SEMI OpenIR  > 中科院半导体材料科学重点实验室
Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors
Huo, WJ; Liang, S; Zhang, C; Tan, SY; Han, LS; Xie, HY; Zhu, HL; Wang, W
2014
Source PublicationOPTICS EXPRESS
Volume22Issue:2Pages:1806-1814
Subject Area半导体材料
Indexed BySCI
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26442
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Huo, WJ,Liang, S,Zhang, C,et al. Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors[J]. OPTICS EXPRESS,2014,22(2):1806-1814.
APA Huo, WJ.,Liang, S.,Zhang, C.,Tan, SY.,Han, LS.,...&Wang, W.(2014).Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors.OPTICS EXPRESS,22(2),1806-1814.
MLA Huo, WJ,et al."Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors".OPTICS EXPRESS 22.2(2014):1806-1814.
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