| Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors | |
| Huo, WJ; Liang, S; Zhang, C; Tan, SY; Han, LS; Xie, HY; Zhu, HL; Wang, W | |
| 2014 | |
| Source Publication | OPTICS EXPRESS
 |
| Volume | 22Issue:2Pages:1806-1814 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2015-05-11 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26442 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Huo, WJ,Liang, S,Zhang, C,et al. Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors[J]. OPTICS EXPRESS,2014,22(2):1806-1814. |
| APA | Huo, WJ.,Liang, S.,Zhang, C.,Tan, SY.,Han, LS.,...&Wang, W.(2014).Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors.OPTICS EXPRESS,22(2),1806-1814. |
| MLA | Huo, WJ,et al."Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors".OPTICS EXPRESS 22.2(2014):1806-1814. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Fabrication and char（881KB） | 限制开放 | License | Application Full Text | |||
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