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Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth
Wen, JJ; Zhang, DL; Liu, Z; Zhou, TW; Xue, CL; Zuo, YH; Li, CB; Wang, QM; Cheng, BW
2014
Source PublicationECS SOLID STATE LETTERS
Volume3Issue:7Pages:Q33-Q35
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26441
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Wen, JJ,Zhang, DL,Liu, Z,et al. Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth[J]. ECS SOLID STATE LETTERS,2014,3(7):Q33-Q35.
APA Wen, JJ.,Zhang, DL.,Liu, Z.,Zhou, TW.,Xue, CL.,...&Cheng, BW.(2014).Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth.ECS SOLID STATE LETTERS,3(7),Q33-Q35.
MLA Wen, JJ,et al."Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth".ECS SOLID STATE LETTERS 3.7(2014):Q33-Q35.
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