| Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth | |
| Wen, JJ; Zhang, DL; Liu, Z; Zhou, TW; Xue, CL; Zuo, YH; Li, CB; Wang, QM; Cheng, BW | |
| 2014 | |
| Source Publication | ECS SOLID STATE LETTERS
 |
| Volume | 3Issue:7Pages:Q33-Q35 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-05-11 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26441 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Wen, JJ,Zhang, DL,Liu, Z,et al. Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth[J]. ECS SOLID STATE LETTERS,2014,3(7):Q33-Q35. |
| APA | Wen, JJ.,Zhang, DL.,Liu, Z.,Zhou, TW.,Xue, CL.,...&Cheng, BW.(2014).Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth.ECS SOLID STATE LETTERS,3(7),Q33-Q35. |
| MLA | Wen, JJ,et al."Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth".ECS SOLID STATE LETTERS 3.7(2014):Q33-Q35. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Effects of Rapid The（325KB） | 限制开放 | License | Application Full Text | |||
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