SEMI OpenIR  > 中科院半导体照明研发中心
Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth
Yang, JK; Wei, TB; Huo, ZQ; Zhang, YH; Hu, Q; Wei, XC; Sun, BJ; Duan, RF; Wang, JX
2014
Source PublicationCRYSTENGCOMM
Volume16Issue:21Pages:4562-4567
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26439
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Yang, JK,Wei, TB,Huo, ZQ,et al. Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth[J]. CRYSTENGCOMM,2014,16(21):4562-4567.
APA Yang, JK.,Wei, TB.,Huo, ZQ.,Zhang, YH.,Hu, Q.,...&Wang, JX.(2014).Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth.CRYSTENGCOMM,16(21),4562-4567.
MLA Yang, JK,et al."Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth".CRYSTENGCOMM 16.21(2014):4562-4567.
Files in This Item:
File Name/Size DocType Version Access License
Defect reduction in (3840KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Yang, JK]'s Articles
[Wei, TB]'s Articles
[Huo, ZQ]'s Articles
Baidu academic
Similar articles in Baidu academic
[Yang, JK]'s Articles
[Wei, TB]'s Articles
[Huo, ZQ]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Yang, JK]'s Articles
[Wei, TB]'s Articles
[Huo, ZQ]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.