SEMI OpenIR  > 半导体超晶格国家重点实验室
Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors
Yang, SX; Tongay, S; Li, Y; Yue, Q; Xia, JB; Li, SS; Li, JB; Wei, SH
2014
Source PublicationNANOSCALE
Volume6Issue:13Pages:7226-7231
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-05-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26437
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yang, SX,Tongay, S,Li, Y,et al. Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors[J]. NANOSCALE,2014,6(13):7226-7231.
APA Yang, SX.,Tongay, S.,Li, Y.,Yue, Q.,Xia, JB.,...&Wei, SH.(2014).Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors.NANOSCALE,6(13),7226-7231.
MLA Yang, SX,et al."Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors".NANOSCALE 6.13(2014):7226-7231.
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