SEMI OpenIR  > 半导体超晶格国家重点实验室
Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
Nan, HY; Wang, ZL; Wang, WH; Liang, Z; Lu, Y; Chen, Q; He, DW; Tan, PH; Miao, F; Wang, XR; Wang, JL; Ni, ZH
2014
Source PublicationACS NANO
Volume8Issue:6Pages:5738-5745
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26418
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Nan, HY,Wang, ZL,Wang, WH,et al. Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding[J]. ACS NANO,2014,8(6):5738-5745.
APA Nan, HY.,Wang, ZL.,Wang, WH.,Liang, Z.,Lu, Y.,...&Ni, ZH.(2014).Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding.ACS NANO,8(6),5738-5745.
MLA Nan, HY,et al."Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding".ACS NANO 8.6(2014):5738-5745.
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