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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
Yang, J; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Li, L; Wu, LL; Le, LC; Li, XJ; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
2014
Source PublicationCHINESE PHYSICS B
Volume23Issue:6Pages:068801
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26415
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Yang, J,Zhao, DG,Jiang, DS,et al. Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells[J]. CHINESE PHYSICS B,2014,23(6):068801.
APA Yang, J.,Zhao, DG.,Jiang, DS.,Liu, ZS.,Chen, P.,...&Yang, H.(2014).Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells.CHINESE PHYSICS B,23(6),068801.
MLA Yang, J,et al."Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells".CHINESE PHYSICS B 23.6(2014):068801.
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