SEMI OpenIR  > 中科院半导体材料科学重点实验室
Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy
Chen, XW; Jia, CH; Chen, YH; Wang, HT; Zhang, WF
2014
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume47Issue:12Pages:125303
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26401
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Chen, XW,Jia, CH,Chen, YH,et al. Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2014,47(12):125303.
APA Chen, XW,Jia, CH,Chen, YH,Wang, HT,&Zhang, WF.(2014).Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy.JOURNAL OF PHYSICS D-APPLIED PHYSICS,47(12),125303.
MLA Chen, XW,et al."Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy".JOURNAL OF PHYSICS D-APPLIED PHYSICS 47.12(2014):125303.
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