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Formation and stability of point defects in monolayer rhenium disulfide
Horzum, S; Cakir, D; Suh, J; Tongay, S; Huang, YS; Ho, CH; Wu, J; Sahin, H; Peeters, FM
2014
Source PublicationPHYSICAL REVIEW B
Volume89Issue:15Pages:155433
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26398
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Horzum, S,Cakir, D,Suh, J,et al. Formation and stability of point defects in monolayer rhenium disulfide[J]. PHYSICAL REVIEW B,2014,89(15):155433.
APA Horzum, S.,Cakir, D.,Suh, J.,Tongay, S.,Huang, YS.,...&Peeters, FM.(2014).Formation and stability of point defects in monolayer rhenium disulfide.PHYSICAL REVIEW B,89(15),155433.
MLA Horzum, S,et al."Formation and stability of point defects in monolayer rhenium disulfide".PHYSICAL REVIEW B 89.15(2014):155433.
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