SEMI OpenIR  > 半导体超晶格国家重点实验室
Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes
Huo, NJ; Yang, SX; Wei, ZM; Li, SS; Xia, JB; Li, JB
2014
Source PublicationSCIENTIFIC REPORTS
Volume4Pages:5209
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26387
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Huo, NJ,Yang, SX,Wei, ZM,et al. Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes[J]. SCIENTIFIC REPORTS,2014,4:5209.
APA Huo, NJ,Yang, SX,Wei, ZM,Li, SS,Xia, JB,&Li, JB.(2014).Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes.SCIENTIFIC REPORTS,4,5209.
MLA Huo, NJ,et al."Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes".SCIENTIFIC REPORTS 4(2014):5209.
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