SEMI OpenIR  > 半导体超晶格国家重点实验室
An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors
Wang, Z; Jiang, XW; Li, SS; Wang, LW
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume104Issue:12Pages:123504
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26384
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wang, Z,Jiang, XW,Li, SS,et al. An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors[J]. APPLIED PHYSICS LETTERS,2014,104(12):123504.
APA Wang, Z,Jiang, XW,Li, SS,&Wang, LW.(2014).An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors.APPLIED PHYSICS LETTERS,104(12),123504.
MLA Wang, Z,et al."An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors".APPLIED PHYSICS LETTERS 104.12(2014):123504.
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