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Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography
Wu, K; Wei, TB; Zheng, HY; Lan, D; Wei, XC; Hu, Q; Lu, HX; Wang, JX; Luo, Y; Li, JM
2014
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume115Issue:12Pages:123101
Subject Area半导体器件
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26382
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wu, K,Wei, TB,Zheng, HY,et al. Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography[J]. JOURNAL OF APPLIED PHYSICS,2014,115(12):123101.
APA Wu, K.,Wei, TB.,Zheng, HY.,Lan, D.,Wei, XC.,...&Li, JM.(2014).Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography.JOURNAL OF APPLIED PHYSICS,115(12),123101.
MLA Wu, K,et al."Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography".JOURNAL OF APPLIED PHYSICS 115.12(2014):123101.
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