SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electrical properties of sulfur-implanted cubic boron nitride thin films
Zhang, XW; Yin, ZG; Si, FT; Gao, HL; Liu, X; Zhang, XL
2014
Source PublicationCHINESE SCIENCE BULLETIN
Volume59Issue:12Pages:1280-1284
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26375
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, XW,Yin, ZG,Si, FT,et al. Electrical properties of sulfur-implanted cubic boron nitride thin films[J]. CHINESE SCIENCE BULLETIN,2014,59(12):1280-1284.
APA Zhang, XW,Yin, ZG,Si, FT,Gao, HL,Liu, X,&Zhang, XL.(2014).Electrical properties of sulfur-implanted cubic boron nitride thin films.CHINESE SCIENCE BULLETIN,59(12),1280-1284.
MLA Zhang, XW,et al."Electrical properties of sulfur-implanted cubic boron nitride thin films".CHINESE SCIENCE BULLETIN 59.12(2014):1280-1284.
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